Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

Journal Article · Thu Apr 21 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4946890· OSTI ID:22594631

Sermage, B.; Essa, Z.; Taleb, N.; Quillec, M. ^[1]; Aubin, J.; Hartmann, J. M.; Veillerot, M. ^[2]

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1. Probion Analysis, 37 rue de Fontenay, 92220 Bagneux (France)
2. Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, Minatec Campus, F-38054 Grenoble (France)

The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C{sup 2} versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, we show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.

• OSTI ID: 22594631
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 15; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
CAPACITANCE
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DEPTH
DIAGRAMS
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTROCHEMISTRY
GERMANIUM ALLOYS
GERMANIUM SILICIDES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
SILICON
SILICON ALLOYS
SPACE CHARGE