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Title: Modelling of electron beam induced nanowire attraction

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4945674· OSTI ID:22594592
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  1. Institute of Technology for Nanostructures (NST), Faculty of Engineering, University of Duisburg-Essen, Bismarckstr. 81, D-47057 Duisburg (Germany)
  2. Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, D-47048 Duisburg (Germany)

Scanning electron microscope (SEM) induced nanowire (NW) attraction or bundling is a well known effect, which is mainly ascribed to structural or material dependent properties. However, there have also been recent reports of electron beam induced nanowire bending by SEM imaging, which is not fully explained by the current models, especially when considering the electro-dynamic interaction between NWs. In this article, we contribute to the understanding of this phenomenon, by introducing an electro-dynamic model based on capacitor and Lorentz force interaction, where the active NW bending is stimulated by an electromagnetic force between individual wires. The model includes geometrical, electrical, and mechanical NW parameters, as well as the influence of the electron beam source parameters and is validated using in-situ observations of electron beam induced GaAs nanowire (NW) bending by SEM imaging.

OSTI ID:
22594592
Journal Information:
Journal of Applied Physics, Vol. 119, Issue 14; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English