Broadband light sources based on InAs/InGaAs metamorphic quantum dots

Journal Article · Thu Apr 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4945436· OSTI ID:22594578

Seravalli, L.; Trevisi, G.; Frigeri, P. ^[1]; Gioannini, M.; Cappelluti, F. ^[2]; Sacconi, F. ^[3]

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1. CNR-IMEM, Parco delle Scienze 37a, I-43100 Parma (Italy)
2. Politecnico di Torino, DET - C.so Duca degli Abruzzi 24, I-10129 Torino (Italy)
3. Tiberlab Srl, Via del Politecnico, 1-00133 Roma (Italy)

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In{sub x}Ga{sub 1−x}As buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in In{sub x}Al{sub y}Ga{sub 1−x−y}As layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescence emission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.

• OSTI ID: 22594578
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 14; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
BUFFERS
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
EMISSION SPECTRA
ENERGY LEVELS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
LIGHT SOURCES
LUMINESCENCE
QUANTUM DOTS
REACTION KINETICS
SEMICONDUCTOR MATERIALS
SYMMETRY
TEMPERATURE RANGE 0273-0400 K
X-RAY SPECTROSCOPY