Coherent control of the Goos-Hänchen shift via Fano interference

Journal Article · Thu Apr 14 04:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4945699· OSTI ID:22594577

Liu, Shaopeng; Yang, Wen-Xing; Zhu, Zhonghu ^[1]

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1. Department of Physics, Southeast University, Nanjing 211189 (China)

A scheme of enhanced Goos-Hänchen (GH) shifts in reflected and transmitted light beams is exploited in a cavity, where an asymmetric double AlGaAs/GaAs quantum well structure with resonant tunneling to a common continuum is employed as the intracavity medium. With the help of Fano-type interference induced by resonant tunneling, the generated GH shifts that contain a negative lateral shift in reflected light beam and a positive lateral shift in transmitted light beam are found to be significantly enhanced. More interestingly, these GH shifts in reflected and transmitted light beams are modulated by means of a control beam and external bias voltage, in which maximum negative shift of 1.86 mm and positive shift of 0.37 mm are achievable.

• OSTI ID: 22594577
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 14 Vol. 119; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ASYMMETRY
BEAMS
CONTROL
ELECTRIC POTENTIAL
FANO FACTOR
GALLIUM ARSENIDES
INTERFERENCE
QUANTUM WELLS
TUNNEL EFFECT