Photo-electrical and transport properties of hydrothermal ZnO

Journal Article · Thu Apr 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4945016· OSTI ID:22594572

Medvid, A. ^[1]; Ščajev, P. ^[2]; Jarašiūnas, K. ^[3]; Korsaks, V.; Mironova-Ulmane, N.; Zubkins, M. ^[4]; Mimura, H. ^[5]

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1. Institute of Technical Physics, Faculty of Materials Science and Applied Chemistry, Riga Technical University, 3/7 Paula Valdena Str., LV-1048 Riga (Latvia)
2. Institute of Applied Research, Vilnius University, Sauletekio Ave. 3, Vilnius 10222 (Lithuania)
3. Department of Semiconductor Physics, Vilnius University, Sauletekio Ave. 3, Vilnius 10222 (Lithuania)
4. Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., 1063 Riga (Latvia)
5. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

We performed the studies of optical, photoelectric, and transport properties of a hydrothermal bulk n-type ZnO crystal by using the contactless optical techniques: photoluminescence, light-induced transient grating, and differential reflectivity. Optical studies revealed bound exciton and defect-related transitions between the donor states (at ∼60 meV and ∼240 meV below the conduction band) and the deep acceptor states (at 0.52 eV above the valence band). The acceptor state was ascribed to V{sub Zn}, and its thermal activation energy of 0.43 eV was determined. A low value of carrier diffusion coefficient (∼0.1 cm{sup 2}/s) at low excitations and temperatures up to 800 K was attributed to impact the recharged deep acceptors. Electron and hole mobilities of 140 and ∼80 cm{sup 2}/Vs, correspondently, were determined at room temperature. The decrease of carrier lifetime with excitation was ascribed to increasing rate of radiative recombination at low temperatures and nonradiative recombination above the room temperature.

• OSTI ID: 22594572
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 13; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACTIVATION ENERGY
CARRIER LIFETIME
ELECTRON MOBILITY
ELECTRONS
EXCITATION
HOLE MOBILITY
MEV RANGE
PHOTOLUMINESCENCE
RECOMBINATION
REFLECTIVITY
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TRANSPORT THEORY
VALENCE
ZINC OXIDES