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Title: Metal oxide semiconductor thin-film transistors for flexible electronics

Abstract

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, highmore » carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.« less

Authors:
; ; ; ;  [1];  [1];  [2]; ; ;  [3]
  1. Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland)
  2. (United Kingdom)
  3. Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)
Publication Date:
OSTI Identifier:
22594366
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Reviews; Journal Volume: 3; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; METALS; OXIDES; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSISTORS

Citation Formats

Petti, Luisa, Vogt, Christian, Büthe, Lars, Cantarella, Giuseppe, Tröster, Gerhard, Münzenrieder, Niko, Sensor Technology Research Centre, University of Sussex, Falmer, Faber, Hendrik, Bottacchi, Francesca, and Anthopoulos, Thomas D. Metal oxide semiconductor thin-film transistors for flexible electronics. United States: N. p., 2016. Web. doi:10.1063/1.4953034.
Petti, Luisa, Vogt, Christian, Büthe, Lars, Cantarella, Giuseppe, Tröster, Gerhard, Münzenrieder, Niko, Sensor Technology Research Centre, University of Sussex, Falmer, Faber, Hendrik, Bottacchi, Francesca, & Anthopoulos, Thomas D. Metal oxide semiconductor thin-film transistors for flexible electronics. United States. doi:10.1063/1.4953034.
Petti, Luisa, Vogt, Christian, Büthe, Lars, Cantarella, Giuseppe, Tröster, Gerhard, Münzenrieder, Niko, Sensor Technology Research Centre, University of Sussex, Falmer, Faber, Hendrik, Bottacchi, Francesca, and Anthopoulos, Thomas D. 2016. "Metal oxide semiconductor thin-film transistors for flexible electronics". United States. doi:10.1063/1.4953034.
@article{osti_22594366,
title = {Metal oxide semiconductor thin-film transistors for flexible electronics},
author = {Petti, Luisa and Vogt, Christian and Büthe, Lars and Cantarella, Giuseppe and Tröster, Gerhard and Münzenrieder, Niko and Sensor Technology Research Centre, University of Sussex, Falmer and Faber, Hendrik and Bottacchi, Francesca and Anthopoulos, Thomas D.},
abstractNote = {The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.},
doi = {10.1063/1.4953034},
journal = {Applied Physics Reviews},
number = 2,
volume = 3,
place = {United States},
year = 2016,
month = 6
}
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