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On the channel width-dependence of the thermal conductivity in ultra-narrow graphene nanoribbons

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4960528· OSTI ID:22594357
 [1];  [2]
  1. Department of Electrical Engineering, University of Kashan, Kashan 87317-53153 (Iran, Islamic Republic of)
  2. School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)
The thermal conductivity of low-dimensional materials and graphene nanoribbons, in particular, is limited by the strength of line-edge-roughness scattering. One way to characterize the roughness strength is the dependency of the thermal conductivity on the channel's width in the form W{sup β}. Although in the case of electronic transport, this dependency is very well studied, resulting in W{sup 6} for nanowires and quantum wells and W{sup 4} for nanoribbons, in the case of phonon transport it is not yet clear what this dependence is. In this work, using lattice dynamics and Non-Equilibrium Green's Function simulations, we examine the width dependence of the thermal conductivity of ultra-narrow graphene nanoribbons under the influence of line edge-roughness. We show that the exponent β is in fact not a single well-defined number, but it is different for different parts of the phonon spectrum depending on whether phonon transport is ballistic, diffusive, or localized. The exponent β takes values β < 1 for semi-ballistic phonon transport, values β ≫ 1 for sub-diffusive or localized phonons, and β = 1 only in the case where the transport is diffusive. The overall W{sup β} dependence of the thermal conductivity is determined by the width-dependence of the dominant phonon modes (usually the acoustic ones). We show that due to the long phonon mean-free-paths, the width-dependence of thermal conductivity becomes a channel length dependent property, because the channel length determines whether transport is ballistic, diffusive, or localized.
OSTI ID:
22594357
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 109; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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