Characterization of encapsulated quantum dots via electron channeling contrast imaging

Journal Article · Mon Aug 08 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4960643· OSTI ID:22594346

Deitz, Julia I.; McComb, David W. ^[1]; Carnevale, Santino D. ^[2]; De Graef, Marc ^[3]

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1. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
3. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

A method for characterization of encapsulated epitaxial quantum dots (QD) in plan-view geometry using electron channeling contrast imaging (ECCI) is presented. The efficacy of the method, which requires minimal sample preparation, is demonstrated with proof-of-concept data from encapsulated (sub-surface) epitaxial InAs QDs within a GaAs matrix. Imaging of the QDs under multiple diffraction conditions is presented, establishing that ECCI can provide effectively identical visualization capabilities as conventional two-beam transmission electron microscopy. This method facilitates rapid, non-destructive characterization of sub-surface QDs giving immediate access to valuable nanostructural information.

• OSTI ID: 22594346
• Journal Information: Applied Physics Letters, Vol. 109, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
DIFFRACTION
ELECTRON CHANNELING
ELECTRONS
EPITAXY
GALLIUM ARSENIDES
GEOMETRY
IMAGES
INDIUM ARSENIDES
MATRICES
QUANTUM DOTS
SAMPLE PREPARATION
SURFACES
TRANSMISSION ELECTRON MICROSCOPY