Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

Journal Article · Mon Aug 01 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4960529· OSTI ID:22594324

Zhang, Xinyu; Wan, Yimao; Bullock, James; Allen, Thomas; Cuevas, Andres ^[1]

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1. Research School of Engineering, The Australian National University, Canberra ACT 0200 (Australia)

This work explores the application of transparent nitrogen doped copper oxide (CuO{sub x}:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuO{sub x}:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuO{sub x}:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm{sup 2} has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

• OSTI ID: 22594324
• Journal Information: Applied Physics Letters, Vol. 109, Issue 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COPPER OXIDES
DEPOSITION
DOPED MATERIALS
FABRICATION
FILMS
FLOW RATE
HOLES
NITROGEN
OPTIMIZATION
OXYGEN
PHYSICAL PROPERTIES
P-TYPE CONDUCTORS
RAMAN SPECTROSCOPY
SILICON SOLAR CELLS
SPUTTERING
SUBSTRATES
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY