Atomic layer deposition synthesized TiO{sub x} thin films and their application as microbolometer active materials

Journal Article · Sun May 15 00:00:00 EDT 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4947120· OSTI ID:22592910

Rasouli, Hamid Reza ^[1]; Ghaffari, Mohammad ^[2]; Topalli, Kagan ^[3]; Okyay, Ali Kemal ^[2]

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1. Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey)
2. National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800 (Turkey)
3. National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800, Turkey and Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey)

This paper demonstrates the possible usage of TiO{sub x} thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as −9%/K near room temperature is obtained. The noise properties of TiO{sub x} films are characterized. It is shown that TiO{sub x} films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications.

• OSTI ID: 22592910
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 3; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BOLOMETERS
DEPOSITION
ELECTRIC CONDUCTIVITY
LAYERS
NOISE
TEMPERATURE COEFFICIENT
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TITANIUM OXIDES