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Title: Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

Abstract

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C{sub 4}F{sub 8} injection. The C{sub 4}F{sub 8} and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.

Authors:
 [1]; ;  [2];  [3]
  1. Electronic Device Systems Business Group, Hitachi High-Technologies Corporation, 794 Higashitoyoi, Kudamatsu, Yamaguchi 744-0002 (Japan)
  2. Department of Material Science and Engineering, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States)
  3. Department of Physics, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States)
Publication Date:
OSTI Identifier:
22592865
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 34; Journal Issue: 4; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ARGON IONS; CARBON MONOXIDE; CHEMICAL STATE; EMISSION; EMISSION SPECTROSCOPY; ETCHING; INJECTION; ION BEAMS; LAYERS; PERFORMANCE; PLASMA; POLYMERS; QUARTZ; SILICA; SILICON OXIDES; STEADY-STATE CONDITIONS; THICKNESS; WALLS; WINDOWS

Citation Formats

Kawakami, Masatoshi, Metzler, Dominik, Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu, and Li, Chen. Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma. United States: N. p., 2016. Web. doi:10.1116/1.4949260.
Kawakami, Masatoshi, Metzler, Dominik, Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu, & Li, Chen. Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma. United States. doi:10.1116/1.4949260.
Kawakami, Masatoshi, Metzler, Dominik, Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu, and Li, Chen. Fri . "Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma". United States. doi:10.1116/1.4949260.
@article{osti_22592865,
title = {Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma},
author = {Kawakami, Masatoshi and Metzler, Dominik and Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu and Li, Chen},
abstractNote = {The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C{sub 4}F{sub 8} injection. The C{sub 4}F{sub 8} and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.},
doi = {10.1116/1.4949260},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 4,
volume = 34,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}