Impacts of Co doping on ZnO transparent switching memory device characteristics

Journal Article · Mon May 02 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4948598· OSTI ID:22591684

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa ^[1]; Prasad, Om Kumar ^[2]; Panda, Debashis ^[3]; Lin, Chun-An; Tsai, Tsung-Ling; Tseng, Tseung-Yuen ^[4]

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1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
2. Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
3. Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India)
4. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

• OSTI ID: 22591684
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COBALT
DOPED MATERIALS
EQUIPMENT
GRAIN GROWTH
LAYERS
MEMORY DEVICES
ORIENTATION
PERFORMANCE
RANDOMNESS
STABILITY
TIN OXIDES
WAVELENGTHS
ZINC OXIDES