In-situ SiN{sub x}/InN structures for InN field-effect transistors
- Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece)
- Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)
Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.
- OSTI ID:
- 22591529
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 14; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
BREAKDOWN
BUFFERS
CAPACITANCE
CAPACITORS
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
INDIUM NITRIDES
LAYERS
METALS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
RELAXATION
SEMICONDUCTOR MATERIALS
STRAINS