Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

Journal Article · Mon Mar 28 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4944774· OSTI ID:22591510

Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W. ^[1]; Vaithyanathan, V.; Schlom, D. G. ^[2]; Li, F.; Chen, L. -Q.; Trolier-McKinstry, S. ^[3]; Rzchowski, M. S. ^[4]

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1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
3. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
4. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

• OSTI ID: 22591510
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTALLOGRAPHY
DEFECTS
ELECTRIC FIELDS
FERROELECTRIC MATERIALS
MAGNESIUM
MAPS
NIOBATES
PERMITTIVITY
PHASE TRANSFORMATIONS
PIEZOELECTRICITY
SILICON
STABILITY
STRAINS
STRONTIUM
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
TITANATES
TRANSITION TEMPERATURE