Extended hot carrier lifetimes observed in bulk In{sub 0.265±0.02}Ga{sub 0.735}N under high-density photoexcitation
- School of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney 2052 (Australia)
- School of Chemistry, The University of Sydney, Sydney 2006 (Australia)
- Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1, 91058 Erlangen (Germany)
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- School of Chemistry, UNSW, Sydney 2052 (Australia)
We have investigated the ultrafast carrier dynamics in a 1 μm bulk In{sub 0.265}Ga{sub 0.735}N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 10{sup 16 }cm{sup −3}. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 10{sup 18 }cm{sup −3}. This is the longest carrier thermalization time observed in bulk InGaN alloys to date.
- OSTI ID:
- 22591501
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 13; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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