Visible-blind and solar-blind ultraviolet photodiodes based on (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3}

Journal Article · Mon Mar 21 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4944860· OSTI ID:22591486

Zhang, Zhipeng; Wenckstern, Holger von; Lenzner, Jörg; Lorenz, Michael; Grundmann, Marius ^[1]

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1. Institut für Experimentelle Physik II, Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstraße 5, 04103 Leipzig (Germany)

UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (In{sub x}Ga{sub 1–x}){sub 2}O{sub 3} thin film with a monotonic lateral variation of 0.0035 < x < 0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified.

• OSTI ID: 22591486
• Journal Information: Applied Physics Letters, Vol. 108, Issue 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABLATION
ABSORPTION
DEPOSITS
DOPED MATERIALS
ENERGY BEAM DEPOSITION
GAIN
ILLUMINANCE
INDIUM
LASER RADIATION
LASERS
PHOTODIODES
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
THIN FILMS
ULTRAVIOLET RADIATION