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Title: Imaging coherent transport in chemical vapor deposition graphene wide constriction by scanning gate microscopy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4944637· OSTI ID:22591481
; ; ;  [1];  [2];  [3];  [4];  [5];  [2]
  1. Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522 (Japan)
  2. Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan (China)
  3. Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)
  4. Department of Electrophysics, National Chiayi University, Chiayi 600, Taiwan (China)
  5. Graduate School of Science, Chiba University, Chiba 263-8522 (Japan)

We use a scanning gate microscopy to perturb coherent transport in chemical vapor deposition (CVD) graphene wide constriction. Particularly, we observe conductance oscillations in the wide constriction region (W ∼ 800 nm) characterized by spatial conductance variations, which imply formation of the nanometer-scale ring structure due to the merged domains and intrinsic grain boundaries. Moreover, additional hot charges from high current can suppress the coherent transport, suggesting that the hot carriers with a wide spreading kinetic energy could easily tunnel merged domains and intrinsic grain boundaries in CVD-grown graphene due to the heating effect, a great advantage for applications in graphene-based interference-type nano-electronics.

OSTI ID:
22591481
Journal Information:
Applied Physics Letters, Vol. 108, Issue 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English