Interface electronic properties of co-evaporated MAPbI{sub 3} on ZnO(0001): In situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy study

Journal Article · Mon Mar 21 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4944591· OSTI ID:22591463

Zhou, Xianzhong; Li, Xiaoli; Huang, Feng; Zhong, Dingyong ^[1]; Liu, Yuan ^[2]

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1. School of Physics and Engineering and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou (China)
2. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou (China)

In this work, the interface electronic properties of ZnO(0001)/CH{sub 3}NH{sub 3}PbI{sub 3} were investigated by both X-ray and ultraviolet photoelectron spectroscopy. The CH{sub 3}NH{sub 3}PbI{sub 3} thin films were grown on single crystalline ZnO(0001) substrate in situ by co-evaporation of PbI{sub 2} and CH{sub 3}NH{sub 3}I at room temperature with various thickness from 1.5 nm to 190 nm. It was found that the conduction band minimum of ZnO lies 0.3 eV below that of CH{sub 3}NH{sub 3}PbI{sub 3}, while the valence band maximum of ZnO lies 2.1 eV below that of CH{sub 3}NH{sub 3}PbI{sub 3}, implying that the electrons can be effectively transported from CH{sub 3}NH{sub 3}PbI{sub 3} to ZnO, and the holes can be blocked in the same time. A PbI{sub 2} rich layer was initially formed at the interface of ZnO(0001)/CH{sub 3}NH{sub 3}PbI{sub 3} during the growth. As a consequence, an interface barrier was built up which may prevent the electron transport at the interface.

• OSTI ID: 22591463
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EVAPORATION
INTERFACES
LAYERS
LEAD IODIDES
MONOCRYSTALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES