Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films
- School of Electron Science and Engineering, Nanjing University, Nanjing 210093 (China)
- Taizhou Institute of Science and Technology, Nanjing University of Science and Technology, Taizhou 225300 (China)
We have reported high internal quantum efficiency (IQE) (∼60%) of photoluminescence (PL) at 470 nm wavelength from oxygenated amorphous silicon nitride (a-SiN{sub x}:O) films. In this work, we explored the dynamics of high PL IQE from luminescent N-Si-O bonding states in a-SiN{sub x}:O films by using a combination of time resolved PL (TRPL) and temperature dependent PL (TDPL) measurements. The TRPL measurements include time integrated PL, microsecond range PL, and nanosecond range PL measurement modes. The a-SiN{sub x}:O films exhibit ns PL decay dynamics that is independent of pumping fluence (W{sub PF}) and uniform across the PL spectrum, which is different from the PL decay behavior in a-SiN{sub x} films. Particularly, we precisely monitored the temporal evolution of the PL spectra profile to verify that the luminescent N-Si-O bonding states are responsible for the observed blue PL with a radiative recombination rate of ∼10{sup 8} s{sup −1}. Such very fast radiative recombination rate can be compared with that in direct band gap CdSe nanocrystals and can also help us to understand the high PL IQE in a-SiN{sub x}:O films. Moreover, by combining the TD-PL lifetimes with the PL IQE values, the temperature dependence of radiative and nonradiative lifetime can be determined.
- OSTI ID:
- 22591430
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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