Modelling and simulation of parallel triangular triple quantum dots (TTQD) by using SIMON 2.0
Journal Article
·
· AIP Conference Proceedings
This research presents analysis of modeling on Parallel Triple Quantum Dots (TQD) by using SIMON (SIMulation Of Nano-structures). Single Electron Transistor (SET) is used as the basic concept of modeling. We design the structure of Parallel TQD by metal material with triangular geometry model, it is called by Triangular Triple Quantum Dots (TTQD). We simulate it with several scenarios using different parameters; such as different value of capacitance, various gate voltage, and different thermal condition.
- OSTI ID:
- 22591133
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1725; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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