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Title: Self assembled monolayers of octadecyltrichlorosilane for dielectric materials

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4945251· OSTI ID:22591122
 [1]; ;  [2];  [1];  [2]
  1. Centre for Nanoscience and Engineering, Indian Institute of Science-Bangalore (India)
  2. Mechanical Engineering Department, Birla Institute of Technology and Science-Pilani (India)

Treatment of surfaces to change the interaction of fluids with them is a critical step in constructing useful microfluidics devices, especially those used in biological applications. Selective modification of inorganic materials such as Si, SiO{sub 2} and Si{sub 3}N{sub 4} is of great interest in research and technology. We evaluated the chemical formation of OTS self-assembled monolayers on silicon substrates with different dielectric materials. Our investigations were focused on surface modification of formerly used common dielectric materials SiO{sub 2}, Si{sub 3}N{sub 4} and a-poly. The improvement of wetting behaviour and quality of monolayer films were characterized using Atomic force microscope, Scanning electron microscope, Contact angle goniometer, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) monolayer deposited oxide surface.

OSTI ID:
22591122
Journal Information:
AIP Conference Proceedings, Vol. 1724, Issue 1; Conference: ETMN-2015: 2. international conference on emerging technologies: Micro to nano 2015, Rajasthan (India), 24-25 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English