Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

Journal Article · Mon May 30 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4952718· OSTI ID:22590735

Cerbu, F.; Madia, O.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A. ^[1]; Andreev, D. V. ^[1]; Fadida, S.; Eizenberg, M. ^[2]; Breuil, L. ^[3]; Lisoni, J. G. ^[3]; Kittl, J. A. ^[1]; Strand, J.; Shluger, A. L. ^[4]

---

1. Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium)
2. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel)
3. imec, 3001 Leuven (Belgium)
4. Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

• OSTI ID: 22590735
• Journal Information: Applied Physics Letters, Vol. 108, Issue 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEFECTS
DEPOSITION
ENERGY SPECTRA
FILMS
HAFNIUM OXIDES
HEAT TREATMENTS
LAYERS
TRAPPED ELECTRONS
TRAPPING
TRAPS
VACANCIES