Dopant-controlled single-electron pumping through a metallic island

Journal Article · Mon May 23 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4951679· OSTI ID:22590710

Wenz, Tobias; Hohls, Frank ^[1]; Jehl, Xavier; Sanquer, Marc ^[2]; Barraud, Sylvain ^[3]; Klochan, Jevgeny; Barinovs, Girts; Kashcheyevs, Vyacheslavs ^[4]

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1. Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)
2. University Grenoble Alpes and CEA-INAC-PHELIQS, F-38000 Grenoble (France)
3. University Grenoble Alpes and CEA-Leti-Minatec, F-38000 Grenoble (France)
4. Faculty of Physics and Mathematics, University of Latvia, Zellu Street 25, LV 1002 Riga (Latvia)

We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.

• OSTI ID: 22590710
• Journal Information: Applied Physics Letters, Vol. 108, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DIFFUSION BARRIERS
DOPED MATERIALS
ELECTRON TRANSFER
PHOSPHORUS
PUMPING
RADIOWAVE RADIATION
RESONANCE
SIGNALS
SILICON
SIMULATION
TUNNEL EFFECT