Enhancements of magnetic properties and planar magnetoresistance by electric fields in γ-Fe{sub 2}O{sub 3}/MgO thin films

Journal Article · Mon May 23 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4952769· OSTI ID:22590700

Cheng, Bin; Qin, Hongwei; Pei, Jinliang; Liu, Liang; Ren, Shaoqing; Hu, Jifan ^[1]

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1. School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100 (China)

The treatment of perpendicular electric field upon γ-Fe{sub 2}O{sub 3}/MgO film at room temperature could adjust the magnetic properties (saturation magnetization, magnetic remanence, coercivity, and saturation magnetizing field) of the film. The enhancement of saturation magnetization after the treatment of electric field may be connected with the combined shift effects of Mg ions from MgO to γ-Fe{sub 2}O{sub 3} and O{sup 2−} ions from γ-Fe{sub 2}O{sub 3} to MgO. The negative magnetoresistance of the γ-Fe{sub 2}O{sub 3}/MgO film also enhances with the treatment of perpendicular electric field at room temperature, possibly due to the increasing of electron hopping rate between Fe{sup 2+} and Fe{sup 3+}.

• OSTI ID: 22590700
• Journal Information: Applied Physics Letters, Vol. 108, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COERCIVE FORCE
ELECTRIC FIELDS
FERRITES
IRON IONS
IRON OXIDES
MAGNESIUM IONS
MAGNESIUM OXIDES
MAGNETIC PROPERTIES
MAGNETIZATION
MAGNETORESISTANCE
SATURATION
TEMPERATURE RANGE 0273-0400 K
THIN FILMS