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Title: Light sensitive memristor with bi-directional and wavelength-dependent conductance control

Abstract

We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories.

Authors:
; ; ; ; ;  [1];  [2];  [3]; ; ;  [2];  [1];  [4]
  1. Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)
  2. Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil)
  3. (United States)
  4. (United Kingdom)
Publication Date:
OSTI Identifier:
22590608
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; CONTROL; HOLES; ILLUMINANCE; QUANTUM DOTS; VISIBLE RADIATION; WAVELENGTHS

Citation Formats

Maier, P., Hartmann, F., E-mail: fabian.hartmann@physik.uni-wuerzburg.de, Emmerling, M., Schneider, C., Kamp, M., Worschech, L., Rebello Sousa Dias, M., Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, Castelano, L. K., Marques, G. E., Lopez-Richard, V., Höfling, S., and SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS. Light sensitive memristor with bi-directional and wavelength-dependent conductance control. United States: N. p., 2016. Web. doi:10.1063/1.4955464.
Maier, P., Hartmann, F., E-mail: fabian.hartmann@physik.uni-wuerzburg.de, Emmerling, M., Schneider, C., Kamp, M., Worschech, L., Rebello Sousa Dias, M., Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, Castelano, L. K., Marques, G. E., Lopez-Richard, V., Höfling, S., & SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS. Light sensitive memristor with bi-directional and wavelength-dependent conductance control. United States. doi:10.1063/1.4955464.
Maier, P., Hartmann, F., E-mail: fabian.hartmann@physik.uni-wuerzburg.de, Emmerling, M., Schneider, C., Kamp, M., Worschech, L., Rebello Sousa Dias, M., Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, Castelano, L. K., Marques, G. E., Lopez-Richard, V., Höfling, S., and SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS. Mon . "Light sensitive memristor with bi-directional and wavelength-dependent conductance control". United States. doi:10.1063/1.4955464.
@article{osti_22590608,
title = {Light sensitive memristor with bi-directional and wavelength-dependent conductance control},
author = {Maier, P. and Hartmann, F., E-mail: fabian.hartmann@physik.uni-wuerzburg.de and Emmerling, M. and Schneider, C. and Kamp, M. and Worschech, L. and Rebello Sousa Dias, M. and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 and Castelano, L. K. and Marques, G. E. and Lopez-Richard, V. and Höfling, S. and SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS},
abstractNote = {We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories.},
doi = {10.1063/1.4955464},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 109,
place = {United States},
year = {2016},
month = {7}
}