Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}

Journal Article · Mon Jul 11 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4958936· OSTI ID:22590563

Kibirev, I. A.; Saranin, A. A. ^[1]; Zotov, A. V. ^[1]

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1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 (Russian Federation)

The formation, structure and electronic properties of SnSe{sub 2}–Bi{sub 2}Se{sub 3} van der Waals heterostructures were studied. Both heterostructures, SnSe{sub 2} on Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3} on SnSe{sub 2}, were grown epitaxially with high crystallinity and sharp interfaces. Their electron band structures are of trivial and topological insulators, respectively. The Dirac surface states of Bi{sub 2}Se{sub 3} survive under the SnSe{sub 2} overlayer. One triple layer of SnSe{sub 2} was found to be an efficient spacer for separating a Bi{sub 2}Se{sub 3} topological-insulator slab into two and creating the corresponding topological surface states.

• OSTI ID: 22590563
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 109; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BISMUTH SELENIDES
EPITAXY
INTERFACES
LAYERS
SURFACES
TIN SELENIDES
TOPOLOGY
VAN DER WAALS FORCES