skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4952624· OSTI ID:22590463
;  [1];  [1]; ;  [2]
  1. QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands)
  2. Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

OSTI ID:
22590463
Journal Information:
Applied Physics Letters, Vol. 108, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

Similar Records

Computer-automated tuning procedures for semiconductor quantum dot arrays
Journal Article · Mon Sep 09 00:00:00 EDT 2019 · Applied Physics Letters · OSTI ID:22590463

Autonomous Tuning and Charge-State Detection of Gate-Defined Quantum Dots
Journal Article · Mon May 04 00:00:00 EDT 2020 · Physical Review Applied · OSTI ID:22590463

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device
Journal Article · Fri Nov 07 00:00:00 EST 2014 · Journal of Applied Physics · OSTI ID:22590463