Crystal growth and anisotropy of high temperature thermoelectric properties of yttrium borosilicide single crystals

Journal Article · Fri Jan 15 00:00:00 EST 2016 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/J.JSSC.2015.10.006· OSTI ID:22573988

Hossain, M. Anwar ^[1]; Tanaka, Isao ^[2]; Tanaka, Takaho; Khan, A. Ullah ^[1]; Mori, Takao ^[1]

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1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba 305-0044 (Japan)
2. Center for Crystal Science and Technology, University of Yamanashi, Miyamae 7-32, Kofu, Yamanashi 400-8511 (Japan)

We studied thermoelectric properties of YB{sub 41}Si{sub 1.3} single crystals grown by the floating zone method. The composition of the grown crystal was confirmed by electron probe micro-analysis. We have determined the growth direction for the first time for these borosilicides, and discovered relatively large anisotropy in electrical properties. We measured the electrical resistivity and Seebeck coefficient along [510] (the growth direction) and [052] directions and we found that this crystal exhibits strong electrical anisotropy with a maximum of more than 8 times. An interesting layered structural feature is revealed along [510] with dense boron cluster layers and yttrium layers, with conductivity enhanced along this direction. We obtained 3.6 times higher power factor along [510] compared to that along [052]. Although the ZT of the present system is low, anisotropy in the thermoelectric properties of a boride was reported for the first time, and can be a clue in developing other boride systems also. - Graphical abstract: The growth direction ([510]) was determined for the first time in YB{sub 41}Si{sub 1.3} single crystals and revealed an interesting layered feature of boron clusters and metal atoms, along which the electrical conductivity and thermoelectric power factor was strongly enhanced. - Highlights: • We have grown YB{sub 41}Si{sub 1.3} single crystals by the floating zone method. • Growth direction of [510] determined for first time in REB{sub 41}Si{sub 1.2}. • Electrical resistivity was strongly anisotropic with possible enhancement along metal layers. • The obtained power factor along [510] is 3.6 times higher than that along [052].

• OSTI ID: 22573988
• Journal Information: Journal of Solid State Chemistry, Vol. 233; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ANISOTROPY
BORIDES
BORON
BORON SILICIDES
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ELECTRON MICROPROBE ANALYSIS
ELECTRON PROBES
ELECTRONS
GROWTH
INORGANIC COMPOUNDS
LAYERS
MONOCRYSTALS
POWER FACTOR
TEMPERATURE RANGE 0400-1000 K
THERMOELECTRIC MATERIALS
THERMOELECTRIC PROPERTIES
YTTRIUM