Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)
- Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)
The parameters of pulsed blue-violet (λ ≈ 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm{sup -2} at an electron energy of 18 keV. (lasers)
- OSTI ID:
- 22551212
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 45, Issue 7; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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