Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber

Journal Article · Mon Nov 30 00:00:00 EST 2015 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2015V045N11ABEH015829· OSTI ID:22551146

Gao, Shang ^[1]

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1. School of Science, Shandong Jiaotong University, Jinan (China)

A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJ and peak power of 2.8 kW. (control of laser radiation parameters)

• OSTI ID: 22551146
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 45, Issue 11; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GALLIUM ARSENIDES
KHZ RANGE
LASER CAVITIES
LASERS
PEAK LOAD
PULSES
PUMPING
Q-SWITCHING
VANADATES
YTTRIUM COMPOUNDS