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Title: Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber

Abstract

A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJ and peak power of 2.8 kW. (control of laser radiation parameters)

Authors:
 [1]
  1. School of Science, Shandong Jiaotong University, Jinan (China)
Publication Date:
OSTI Identifier:
22551146
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 45; Journal Issue: 11; Other Information: Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM ARSENIDES; KHZ RANGE; LASER CAVITIES; LASERS; PEAK LOAD; PULSES; PUMPING; Q-SWITCHING; VANADATES; YTTRIUM COMPOUNDS

Citation Formats

Gao, Shang. Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber. United States: N. p., 2015. Web. doi:10.1070/QE2015V045N11ABEH015829.
Gao, Shang. Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber. United States. https://doi.org/10.1070/QE2015V045N11ABEH015829
Gao, Shang. Mon . "Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber". United States. https://doi.org/10.1070/QE2015V045N11ABEH015829.
@article{osti_22551146,
title = {Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber},
author = {Gao, Shang},
abstractNote = {A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJ and peak power of 2.8 kW. (control of laser radiation parameters)},
doi = {10.1070/QE2015V045N11ABEH015829},
url = {https://www.osti.gov/biblio/22551146}, journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 11,
volume = 45,
place = {United States},
year = {2015},
month = {11}
}