Passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser with a GaAs saturable absorber
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- School of Science, Shandong Jiaotong University, Jinan (China)
A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO{sub 4}/Nd : YVO{sub 4}/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJ and peak power of 2.8 kW. (control of laser radiation parameters)
- OSTI ID:
- 22551146
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 11 Vol. 45; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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