Transmittance jump in a thin aluminium layer during laser ablation
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
- A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
A jump in the transmittance (from ∼0.1% to ∼50% for ∼1 ns) of an optical gate on a Mylar film (a thin aluminium layer on a Lavsan substrate) irradiated by nanosecond (10{sup -7} – 10{sup -8} s) pulses of a neodymium laser with an intensity up to 0.1 GW cm{sup -2} has been recorded. The mechanism of a fast (10{sup -10} – 10{sup -11} s) increase in the transmittance of the aluminium layer upon its overheating (without boiling) to the metal – insulator phase-transition temperature is discussed. (interaction of laser radiation with matter. laser plasma)
- OSTI ID:
- 22551095
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 46, Issue 2; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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