Calculation of defect structure and site preference of ternary elements in offstoichiometric gamma TiAl by pseudo-ground state analysis
- Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering
- Tokyo Inst. of Technology, Yokohama (Japan). Precision and Intelligence Lab.
The type of defect structures and the site preference of ternary elements are estimated for offstoichiometric L1{sub 0}-type TiAl compounds using the pseudo-ground state analysis. The results show that substitutional defects are formed in any ternary TiAl compounds regardless of compositions. The site preference of ternary elements strongly depends on the alloy composition as well as the relative magnitude in ordering energies between their constituent elements. It is found that most elements in groups 1A through 4A, such as Zr and Hf, occupy only Ti sites. It is also found that elements in groups 4B and 5B, such as Si and As, occupy only Al sites and that the rest of elements occupy either sites.
- OSTI ID:
- 225109
- Report Number(s):
- CONF-950201--; ISBN 0-87339-304-X
- Country of Publication:
- United States
- Language:
- English
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