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Title: Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Abstract

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

Authors:
 [1];  [2];  [3];  [4];  [1]; ;  [5];  [5];  [4]
  1. Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)
  2. (muSIC), Tohoku University, Sendai 980-0845 (Japan)
  3. Creative Research Institution, Hokkaido University, Sapporo 001-0021 (Japan)
  4. (Japan)
  5. Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22499241
Resource Type:
Journal Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; ENERGY BEAM DEPOSITION; EPITAXY; LASER RADIATION; LITHIUM HYDRIDES; MAGNESIUM OXIDES; PULSED IRRADIATION; SUBSTRATES; SURFACES; THIN FILMS

Citation Formats

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp, Micro System Integration Center, Isobe, Shigehito, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Kuwano, Hiroki, Shiraki, Susumu, Hitosugi, Taro, Orimo, Shin-ichi, and Institute for Materials Research, Tohoku University, Sendai 980-8577. Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH. United States: N. p., 2015. Web. doi:10.1063/1.4931080.
Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp, Micro System Integration Center, Isobe, Shigehito, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Kuwano, Hiroki, Shiraki, Susumu, Hitosugi, Taro, Orimo, Shin-ichi, & Institute for Materials Research, Tohoku University, Sendai 980-8577. Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH. United States. doi:10.1063/1.4931080.
Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp, Micro System Integration Center, Isobe, Shigehito, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Kuwano, Hiroki, Shiraki, Susumu, Hitosugi, Taro, Orimo, Shin-ichi, and Institute for Materials Research, Tohoku University, Sendai 980-8577. Tue . "Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH". United States. doi:10.1063/1.4931080.
@article{osti_22499241,
title = {Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH},
author = {Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp and Micro System Integration Center and Isobe, Shigehito and Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 and Kuwano, Hiroki and Shiraki, Susumu and Hitosugi, Taro and Orimo, Shin-ichi and Institute for Materials Research, Tohoku University, Sendai 980-8577},
abstractNote = {We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.},
doi = {10.1063/1.4931080},
journal = {APL Materials},
issn = {2166-532X},
number = 9,
volume = 3,
place = {United States},
year = {2015},
month = {9}
}