Strain accommodation through facet matching in La{sub 1.85}Sr{sub 0.15}CuO{sub 4}/Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4} ramp-edge junctions

Journal Article · Sat Aug 01 04:00:00 EDT 2015 · APL Materials

DOI:https://doi.org/10.1063/1.4927796· OSTI ID:22499236

Hoek, M.; Coneri, F.; Poccia, N.; Renshaw Wang, X.; Ke, X.; Van Tendeloo, G. ^[1]

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1. Electron Microscopy for Materials Science (EMAT), Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium)

Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4} and superconducting hole-doped La{sub 1.85}Sr{sub 0.15}CuO{sub 4} thin films, the latter being the top layer. On the ramp, a new growth mode of La{sub 1.85}Sr{sub 0.15}CuO{sub 4} with a 3.3° tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

• OSTI ID: 22499236
• Journal Information: APL Materials, Journal Name: APL Materials Journal Issue: 8 Vol. 3; ISSN AMPADS; ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
DOPED MATERIALS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION