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Title: Crystallization engineering as a route to epitaxial strain control

Abstract

The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO{sub 3} and (001)LaAlO{sub 3} substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO{sub 3} phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO{sub 3} results in a coherently strained film, the same films obtained on (001)LaAlO{sub 3} showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001)SrTiO{sub 3}. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

Authors:
; ;  [1];  [2];  [1];  [3]
  1. Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States)
  2. Department of Physics, Rowan University, Glassboro, New Jersey 08028 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22499215
Resource Type:
Journal Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINATES; CRYSTALLIZATION; DISLOCATIONS; EPITAXY; LANTHANUM COMPOUNDS; OXIDES; PEROVSKITE; STRAINS; STRONTIUM TITANATES; SUBSTRATES; SYNTHESIS; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Akbashev, Andrew R., Plokhikh, Aleksandr V., Barbash, Dmitri, Lofland, Samuel E., Spanier, Jonathan E., E-mail: spanier@drexel.edu, and Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104. Crystallization engineering as a route to epitaxial strain control. United States: N. p., 2015. Web. doi:10.1063/1.4933064.
Akbashev, Andrew R., Plokhikh, Aleksandr V., Barbash, Dmitri, Lofland, Samuel E., Spanier, Jonathan E., E-mail: spanier@drexel.edu, & Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104. Crystallization engineering as a route to epitaxial strain control. United States. doi:10.1063/1.4933064.
Akbashev, Andrew R., Plokhikh, Aleksandr V., Barbash, Dmitri, Lofland, Samuel E., Spanier, Jonathan E., E-mail: spanier@drexel.edu, and Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104. Thu . "Crystallization engineering as a route to epitaxial strain control". United States. doi:10.1063/1.4933064.
@article{osti_22499215,
title = {Crystallization engineering as a route to epitaxial strain control},
author = {Akbashev, Andrew R. and Plokhikh, Aleksandr V. and Barbash, Dmitri and Lofland, Samuel E. and Spanier, Jonathan E., E-mail: spanier@drexel.edu and Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104},
abstractNote = {The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO{sub 3} and (001)LaAlO{sub 3} substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO{sub 3} phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO{sub 3} results in a coherently strained film, the same films obtained on (001)LaAlO{sub 3} showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001)SrTiO{sub 3}. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.},
doi = {10.1063/1.4933064},
journal = {APL Materials},
issn = {2166-532X},
number = 10,
volume = 3,
place = {United States},
year = {2015},
month = {10}
}