Interface properties of Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure by cathodoluminescence spectroscopy
- St. Petersburg State University, St. Petersburg 198504 (Russian Federation)
We studied formation of the SiO{sub 2}-T{sub 2}O{sub 5} interface in the Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure using Cathodoluminescence Spectroscopy (CLS). Analyzing the evolution of CLS spectrum of the Si-SiO{sub 2} structure while depositing the Ta{sub 2}O{sub 5} layer allowed to estimate an optical transmittance of the Ta{sub 2}O{sub 5} layer and its band gap. Spectral features related to the formation of the SiO{sub 2}-Ta{sub 2}O{sub 5} interface were identified by comparison of the experimental CL spectrum of the Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure and its simulated counterpart. This formation involves a decomposition of silanol groups at the outer surface of the SO{sub 2} layer and creation of the Si{sub x}Ta{sub y}O-type layer containing luminescence centers with the emission band centered at 3 eV photon energy.
- OSTI ID:
- 22494988
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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