Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

Journal Article · Sun Feb 07 04:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4941102· OSTI ID:22494987

Shetty, Satish

We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures—“8 × 8” and “8/3 × 8/3”—form, and further nitridation leads to 1 × 1 stoichiometric silicon nitride. The interface is seen to have the Si{sup 1+} and Si{sup 3+} states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses. The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending.

• OSTI ID: 22494987
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 119; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMIC FORCE MICROSCOPY
DISLOCATIONS
ELECTRON DIFFRACTION
INTERFACES
NITRIDATION
NITROGEN
PLASMA
SILICON NITRIDES
X-RAY PHOTOELECTRON SPECTROSCOPY