Morphological analysis of GeTe in inline phase change switches
- Northrop Grumman Electronic Systems, Advanced Concepts and Technologies Division, 1212 Winterson Rd., Linthicum, Maryland 21090 (United States)
- Evans Analytical Group, 628 Hutton St., Raleigh, North Carolina 27606 (United States)
Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.
- OSTI ID:
- 22494832
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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