Characteristics of microdomains and microdomain patterns recorded by electron beam irradiation on Y-cut LiNbO{sub 3} crystals
- Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region (Russian Federation)
- Moscow State Institute of Radio Engineering, Electronics and Automation, 119454 Moscow (Russian Federation)
We present the results of investigations of planar domain patterns (isolated domains and domain gratings) fabricated by irradiation of the nonpolar Y-surface of LiNbO{sub 3} crystals by an electron beam (EB) incident normally onto the surface. The EB recorded domains were investigated using atomic force microscopy, confocal second harmonic generation microscopy, and chemical etching as an auxiliary method. The dependence of the domain characteristics on irradiation conditions (acceleration voltage U, EB current I, and irradiation time t{sub irr}) were determined. The length L{sub d} of both isolated domains and domain gratings along the polar axis Z grows linearly with t{sub irr} (at U, I = const) with no tending to saturation. The plots L{sub d}(t{sub irr}) obtained for U = 10 and 15 kV are practically identical, whereas the values of L{sub d} for U = 5 kV are essentially lower. The domain thickness T{sub d} along the Y-direction, i.e., the depth of the switched layer grows with acceleration voltage U. These results are discussed in terms of space-charge fields formation arising under EB irradiation of insulators. The linearity of L{sub d}(t{sub irr}) is accounted for by the frontal domain growth via the viscous friction law. The experimental dependence of T{sub d} on U supports the suggestion that the domain thickness is determined by the penetration depth R{sub e} of primary electrons, which in turn is governed by U. The difference in L{sub d}(t{sub irr}) plots for different U is accounted for by different electron emission σ. Indirect evidences of a defect structure modification in a thin surface layer with respect to the crystal bulk are obtained.
- OSTI ID:
- 22494743
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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