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Domain configuration changes under electric field-induced antiferroelectric-ferroelectric phase transitions in NaNbO{sub 3}-based ceramics

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4928153· OSTI ID:22494693
;  [1]; ;  [2]
  1. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Taiyo Yuden Co., Ltd., Takasaki, Gunma 370-3347 (Japan)
We recently developed a feasible crystal chemistry strategy to stabilize the antiferroelectricity in NaNbO{sub 3} through a chemical substitution to decrease the tolerance factor and increase the average electronegativity of the system [Shimizu et al., Dalton Trans. 44, 10763 (2015) and Guo et al., J. Appl. Phys. 117, 214103 (2015)]. Two novel lead-free antiferroelectric (AFE) solid solutions, (1-x)NaNbO{sub 3}-xCaZrO{sub 3} and (1-x)NaNbO{sub 3}-xSrZrO{sub 3}, have been found to exhibit the double polarization hysteresis typical of a reversible AFE ↔ ferroelectric (FE) phase transition. In this study, as demonstrated by (1-x)NaNbO{sub 3}-xCaZrO{sub 3} system, the influence of chemical modification and electrical poling on the AFE/FE phase stability was investigated, primarily focusing on the microstructural and crystallographic evolutions. Together with the macroscopic polarization hysteresis measurements, a well-demonstrated structure-property relationship was presented. It was found that the CaZrO{sub 3} substitution into NaNbO{sub 3} can effectively destabilize the FE Q phase and correspondingly lead to a spontaneous reverting to AFE P phase. In contrast to the reversible AFE ↔ FE phase transition, the domain morphology evolution exhibits irreversible nature with a growing process of the orientational domains after applying electric field. Moreover, a multiple-zone axes electron diffraction map of P and Q phases has been summarized and is believed to be an efficient diagram to determine the AFE/FE nature of the NaNbO{sub 3}-based systems.
OSTI ID:
22494693
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English