Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

Journal Article · Fri Jan 22 00:00:00 EST 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4940111· OSTI ID:22494563

Abu Hassan, H. ^[1]; Saafie, S.; Afishah, A. ^[2]

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1. School of Physics and Materials, Faculty of Applied Science, Universiti Teknologi MARA, Shah Alam, Selangor (Malaysia)
2. Physics with Electronic Department, Faculty of Science and Natural Resources, University of Malaysia Sabah, Kota Kinabalu, Sabah (Malaysia)

Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 10{sup 10} n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 10{sup 8} n/cm{sup 2}. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence.

• OSTI ID: 22494563
• Journal Information: AIP Conference Proceedings, Vol. 1704, Issue 1; Conference: iNuSTEC2015: International muclear science, technology and engineering conference 2015, Negeri Sembilan (Malaysia), 17-19 Aug 2015; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRICAL PROPERTIES
GAIN
INTERFACES
IRRADIATION
MEV RANGE 10-100
MOS TRANSISTORS
NEUTRON FLUENCE
NEUTRONS
TRAPPING
TRAPS