Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor
- Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814 (Japan)
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198 (Japan)
- Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)
- Research Institute of Electronics, Shizuoka University, 3-5-1, Johoku, Hamamatsu 432-8011 (Japan)
A triple-dot single-electron transistor was fabricated on silicon-on-insulator wafer using pattern-dependent oxidation. A specially designed one-dimensional silicon wire having small constrictions at both ends was converted to a triple-dot single-electron transistor by means of pattern-dependent oxidation. The fabrication of the center dot involved quantum size effects and stress-induced band gap reduction, whereas that of the two side dots involved thickness modulation because of the complex edge structure of two-dimensional silicon. Single-electron turnstile operation was confirmed at 8 K when a 100-mV, 1-MHz square wave was applied. Monte Carlo simulations indicated that such a device with inhomogeneous tunnel and gate capacitances can exhibit single-electron transfer.
- OSTI ID:
- 22493000
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Chemically assembled double-dot single-electron transistor analyzed by the orthodox model considering offset charge
Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.