Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors

Journal Article · Wed Oct 07 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931890· OSTI ID:22492780

Verreck, Devin; Groeseneken, Guido ^[1]; Verhulst, Anne S.; Mocuta, Anda; Collaert, Nadine; Thean, Aaron ^[1]; Van de Put, Maarten; Magnus, Wim ^[1]; Sorée, Bart ^[1]

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1. imec, Kapeldreef 75, 3001 Leuven (Belgium)

Efficient quantum mechanical simulation of tunnel field-effect transistors (TFETs) is indispensable to allow for an optimal configuration identification. We therefore present a full-zone 15-band quantum mechanical solver based on the envelope function formalism and employing a spectral method to reduce computational complexity and handle spurious solutions. We demonstrate the versatility of the solver by simulating a 40 nm wide In{sub 0.53}Ga{sub 0.47}As lineTFET and comparing it to p-n-i-n configurations with various pocket and body thicknesses. We find that the lineTFET performance is not degraded compared to semi-classical simulations. Furthermore, we show that a suitably optimized p-n-i-n TFET can obtain similar performance to the lineTFET.

• OSTI ID: 22492780
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONFIGURATION
FIELD EFFECT TRANSISTORS
OPTIMIZATION
PERFORMANCE
QUANTUM MECHANICS
THICKNESS
ZONES