Hole transport assisted by the piezoelectric field in In{sub 0.4}Ga{sub 0.6}N/GaN quantum wells under electrical injection

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931575· OSTI ID:22492760

Zhang, Shuailong; Gu, Erdan ^[1]; Xie, Enyuan; Herrnsdof, Johannes; Gong, Zheng; Watson, Ian M.; Dawson, Martin D. ^[1]; Yan, Tongxing; Yang, Wei; Hu, Xiaodong ^[2]

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1. Institute of Photonics, SUPA, University of Strathclyde, Glasgow G4 0NW (United Kingdom)
2. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)

The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm{sup 2}. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

• OSTI ID: 22492760
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIERS
CURRENT DENSITY
ELECTROLUMINESCENCE
GALLIUM NITRIDES
INDIUM
LIGHT EMITTING DIODES
PIEZOELECTRICITY
QUANTUM WELLS
SIMULATION
SPECTRA