High-temperature thermoelectric properties of Hg-doped CuInTe{sub 2}

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931600· OSTI ID:22492742

Drasar, C.; Kasparova, J.; Plechacek, T.; Benes, L. ^[1]; Navratil, J.; Vlcek, M. ^[2]

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1. Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic)
2. Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Praha (Czech Republic)

Polycrystalline samples of composition CuIn{sub 1−x}Hg{sub x}Te{sub 2} (x = 0–0.21) were synthesized from elements of 5N purity using a solid state reaction. The phase purity of the products was verified by X-ray diffraction. Samples for transport property measurements were prepared using hot-pressing. The samples were characterized by measurement of the electrical conductivity, Hall coefficient, Seebeck coefficient, and thermal conductivity over a temperature range of 300–675 K. All samples show p-type conductivity. We discuss the influence of Hg substitution on the free carrier concentration and thermoelectric performance. The investigation of the thermoelectric properties shows up to a 40% improvement of ZT in the temperature range of 300–600 K.

• OSTI ID: 22492742
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
HOT PRESSING
POLYCRYSTALS
TEMPERATURE RANGE 0400-1000 K
THERMAL CONDUCTIVITY
THERMOELECTRIC PROPERTIES
X-RAY DIFFRACTION