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Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4931888· OSTI ID:22492737
;  [1];  [2];  [2];  [1]
  1. Toyota Central Research and Development Laboratories, Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192 (Japan)
  2. Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.

OSTI ID:
22492737
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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