High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

Journal Article · Mon Sep 28 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931914· OSTI ID:22492711

Ricker, R.; Aytac, Y.; Boggess, T. F.; Prineas, J. P. ^[1]

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1. Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52240 (United States)

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

• OSTI ID: 22492711
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
DISLOCATIONS
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
LIGHT EMITTING DIODES
OPACITY
QUANTUM EFFICIENCY
RECOMBINATION
SUBSTRATES
SUPERLATTICES
THERMODYNAMIC PROPERTIES