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Strain localization parameters of AlCu4MgSi processed by high-energy electron beams

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4932819· OSTI ID:22492560
The influence of the electron beam surface treatment of AlCu4MgSi on the strain localization parameters and on the critical strain value of the Portevin–Le Chatelier effect has been considered. The strain localization parameters were measured using speckle imaging of the specimens subjected to the constant strain rate uniaxial tension at a room temperature. Impact of the surface treatment on the Portevin–Le Chatelier effect has been investigated.
OSTI ID:
22492560
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1683; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English

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