Strain localization parameters of AlCu4MgSi processed by high-energy electron beams

Journal Article · Tue Oct 27 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4932819· OSTI ID:22492560

Lunev, A. G., E-mail: [e-mail]; Nadezhkin, M. V., E-mail: [e-mail] ^[1]; National Research Tomsk Polytechnic University, Tomsk, 634050 ^[2]; Konovalov, S. V., E-mail: [e-mail] ^[3]; Siberian State Industrial University, Novokuznetsk, 654007 ^[2]; Teresov, A. D., E-mail: [e-mail] ^[4]

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1. Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation)
2. (Russian Federation)
3. National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation)
4. Institute of High Current Electronics SB RAS, Tomsk, 634055 (Russian Federation)

The influence of the electron beam surface treatment of AlCu4MgSi on the strain localization parameters and on the critical strain value of the Portevin–Le Chatelier effect has been considered. The strain localization parameters were measured using speckle imaging of the specimens subjected to the constant strain rate uniaxial tension at a room temperature. Impact of the surface treatment on the Portevin–Le Chatelier effect has been investigated.

• OSTI ID: 22492560
• Journal Information: AIP Conference Proceedings, Vol. 1683, Issue 1; Conference: International conference on advanced materials with hierarchical structure for new technologies and reliable structures 2015, Tomsk (Russian Federation), 21-25 Sep 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
BIOMEDICAL RADIOGRAPHY
COPPER COMPOUNDS
DEFORMATION
ELECTRON BEAMS
MAGNESIUM SILICIDES
STRAIN RATE
STRAINS
SURFACE TREATMENTS
TEMPERATURE RANGE 0273-0400 K