Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge{sub 1−x}Sn{sub x} alloys
- Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)
Direct gap Ge{sub 1−x}Sn{sub x} alloys under [100] and [110] uniaxial strain are comprehensively investigated by theoretical calculations using the nonlocal empirical pseudopotential method (EPM). It is shown that [100] uniaxial tensile strain aids indirect-to-direct gap transition in Ge{sub 1−x}Sn{sub x} alloys. The Γ electron effective mass along the optimal direction under [110] uniaxial strain is smaller than those under [100] uniaxial strain and (001) biaxial strain. Additionally, the direct tunneling gap is smallest along the strain-perpendicular direction under [110] uniaxial tensile strain, resulting in a maximum direct band-to-band tunneling generation rate. An optimal [110] uniaxial tensile strain is favorable for high-performance direct gap Ge{sub 1−x}Sn{sub x} electronic devices.
- OSTI ID:
- 22492396
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 1 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of tensile strain on the electronic structure of Ge: A first-principles calculation
Electromodulation spectroscopy of direct optical transitions in Ge{sub 1−x}Sn{sub x} layers under hydrostatic pressure and built-in strain