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Title: Electronic structure of the (Nd{sub 1−x}Dy{sub x}){sub 2}Fe{sub 14}B (0 ≤ x ≤ 1) system studied by X-ray photoelectron spectroscopy

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4931920· OSTI ID:22492377
;  [1];  [2];  [3];  [1];  [4]
  1. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240 (China)
  2. Scientific Instruments Dept., Shimadzu China Co., LTD., Shenyang, 110001 (China)
  3. Instrumental Analysis Center, Shanghai Jiao Tong University, Shanghai, 200240 (China)
  4. Hirano Institute for Materials Innovation, Shanghai Jiao Tong University, Shanghai, 200240 (China)

Systematic characterization of electronic structures in the (Nd{sub 1−x}Dy{sub x}){sub 2}Fe{sub 14}B system, especially the 4f behavior, provides an insight to the physical nature of the evolution of magnetic properties. A series of X-ray photoelectron spectroscopy (XPS) core-level and valence-band spectra were used to study the electronic structures. It was found that substitution of Dy for Nd in Nd{sub 2}Fe{sub 14}B results in a nonlinear variation in the evolution of electronic structures. Only the finite coupling between the Nd 4f states and the Fe 3d states is found at both the Nd-rich regime and the Dy-rich regime. When the Dy concentration and the Nd concentration approach to be equal, a strong coupling between the Nd 4f states and the Fe 3d states is found, which results in a bonding state between them. Additionally, the 4f components in the (Nd{sub 1−x}Dy{sub x}){sub 2}Fe{sub 14}B system are ascribed to three parts: 1) the individual contribution of the Dy 4f states, which emerges just after the Dy-substitution; 2) the contribution of the coupling between the Nd 4f states and the Dy 4f states, which arises only when 0.4 ≤ x ≤ 0.6; 3) the associated contributions of the Nd 4f states and the Dy 4f states, where the contribution of the Nd 4f states and that of the Dy 4f states are prominent in the Nd-rich regime and Dy-rich regime, respectively.

OSTI ID:
22492377
Journal Information:
AIP Advances, Vol. 5, Issue 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English